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Home > products > Electronic IC Chips > STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

STP20NM50FP npn darliCM GROUPon power transistor Power Mosfet Transistor N-CHANNEL MDmesh?Power MOSFET

manufacturer:
Manufacturer
Description:
N-Channel 550 V 20A (Tc) 45W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Gate-Source Voltage:
± 30 V
Peak Diode Recovery Voltage Slope:
15 V/ns
Operating Junction Temperature:
-65 To 150 °C
Storage Temperature:
-65 To 150 °C
Thermal Resistance Junction-amb Max:
62.5 °C/W
Maximum Lead Temperature For Soldering Purpose:
300 °C
Highlight:

npn smd transistor

,

silicon power transistors

Introduction

 
STB20NM50 - STB20NM50-1
STP20NM50 - STP20NM50FP
 
N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK
Zener-Protected SuperMESH™ MOSFET
 
General features

Type VDSS(@Tj max) RDS(on) ID

STB20NM50

STB20NM50-1

STP20NM50

STP20NM50FP

550 V

550 V

550 V

550 V

<0.25 Ω

<0.25 Ω

<0.25 Ω

<0.25 Ω

20 A

20 A

20 A

20 A

■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
 
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.
 
Applications
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies.
 
Absolute maximum ratings

Symbol Parameter Value Unit
    TO-220/D²PAK/I²PAK TO-220FP  
VGS Gate-Source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 20 20 (Note 3) A
ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (Note 3) A
IDM Note 2 Drain Current (pulsed) 80 80 (Note 3) A
PTOT Total Dissipation at TC = 25°C 192 45 W
  Derating Factor 1.2 0.36 W/°C
dv/dt Note 1 Peak Diode Recovery voltage slope 15 V/ns
VISO Insulation Withstand Volatge (DC) - 2000 V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150 °C

 
Package

 
Internal schematic diagram

 
 
Stock Offer (Hot Sell)

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