P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET
npn smd transistor
,silicon power transistors
STP10NK80Z - STP10NK80ZFP STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
| TYPE | VDSS | RDS(on) | ID | Pw |
|
STP10NK80Z STP10NK80ZFP STW10NK80Z |
800 V 800 V 800 V |
< 0.90 Ω < 0.90 Ω < 0.90 Ω |
9 A 9 A 9 A |
160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP10NK80Z | STP10NK80ZFP | STW10NK80Z | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
| ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
| IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
| PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
| Derating Factor | 1.28 | 0.32 | 1.28 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C °C |
||
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed.
Stock Offer (Hot Sell)
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| BD82Q57 SLGZW | 423 | INTEL | 10+ | BGA |
| X28HC64P-12 | 2500 | XICOR | 13+ | DIP-28 |
| 8909000938* | 1024 | BOSCH | 14+ | QFP |
| 8905507184* | 1013 | BOSCH | 15+ | QFP |
| M48T08-150PC1 | 3594 | ST | 14+ | DIP |
| LM318N | 4965 | NSC | 14+ | DIP-8 |
| NTD2955-1G | 4500 | ON | 14+ | TO-251 |
| PCF7936AS | 2700 | 14+ | SOT | |
| LPV358MX | 6254 | 14+ | SOP-8 | |
| XC5VSX50T-1FFG665I | 178 | XILINX | 10+ | BGA |
| PCF7935AS | 2780 | 16+ | SOT | |
| LTC4413EDD#TRPBF | 6259 | LINEAR | 10+ | QFN |
| LPC1114FBD48/302 | 2731 | 15+ | QFP | |
| NC7SZ175P6X | 38000 | FAIRCHILD | 16+ | SC70-6 |
| LM340T-12 | 10000 | NSC | 15+ | TO-220 |
| MAX6301CSA+T | 4137 | MAXIM | 16+ | SOP |
| MAX3232ECAE+T | 11300 | MAXIM | 16+ | SSOP |
| XR2206CP | 4000 | EXAR | 14+ | DIP-16 |
| OPA544T | 7920 | TI | 14+ | TO-220 |
| PCA9517DR | 12120 | TI | 14+ | SOP |
| MC1455P1G | 8399 | ON | 15+ | DIP |
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