P4NK60ZFP Power Mosfet Transistor high power mosfet transistors
manufacturer:
Manufacturer
Description:
N-Channel 600 V 4A (Tc) 25W (Tc) Through Hole TO-220FP
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage:
600 V
Drain-gate Voltage:
600 V
Gate- Source Voltage:
± 30 V
Peak Diode Recovery Voltage Slope:
4.5 V/ns
Insulation Withstand Voltage:
2500 V
Operating Junction Temperature:
-55 To 150 °C
Highlight:
power mosfet ic
,multi emitter transistor
Introduction
Stock Offer (Hot Sell)
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STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
|
STP4NK60Z STB4NK60Z STB4NK60Z-1 |
STP4NK60ZFP |
STD4NK60Z STD4NK60Z-1 |
|||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 | A |
| ID | Drain Current (continuous) at TC = 100°C | 2.5 | 2.5 (*) | 2.5 | A |
| IDM (•) | Drain Current (pulsed) | 16 | 16 (*) | 16 | A |
| PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
| Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C | ||
(•) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
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MOQ:
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