Send Message
Home > products > Electronic IC Chips > STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

manufacturer:
Manufacturer
Description:
N-Channel 600 V 4A (Tc) 70W (Tc) Surface Mount DPAK
Category:
Electronic IC Chips
Price:
Negotiate
Payment Method:
T/T, Western Union, Paypal
Specifications
Drain-source Voltage (VGS = 0):
600 V
Drain-gate Voltage (RGS = 20 KΩ):
600 V
Gate- Source Voltage:
± 30 V
Gate Source ESD(HBM-C=100pF, R=1.5KΩ):
3000 V
Peak Diode Recovery Voltage Slope:
4.5 V/ns
Operating Junction Temperature:
-55 To 150 °C
Highlight:

power mosfet ic

,

multi emitter transistor

Introduction

 
STP4NK60Z - STP4NK60ZFP
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
 
N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK
Zener-Protected SuperMESHTMPower MOSFET
 
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
 
DESCRIPTION
The SuperMESHTM series is obtained through an extreme optimization of ST’s well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
 
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
 
ABSOLUTE MAXIMUM RATINGS

SymbolParameterValueUnit
STP4NK60Z STB4NK60ZSTP4NK60ZFPSTD4NK60Z STD4NK60Z-1
VDSDrain-source Voltage (VGS = 0)600V
VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
VGSGate- source Voltage± 30V
IDDrain Current (continuous) at TC = 25°C44 (*)4A
IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
IDM (l )Drain Current (pulsed)1616 (*)16A
PTOTTotal Dissipation at TC = 25°C702570W
 Derating Factor0.560.20.56W/°C
VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
VISOInsulation Withstand Voltage (DC)-2500-V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

°C

(l ) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
 
 
 
Stock Offer (Hot Sell)

Part NO.Q'tyMFGD/CPackage
LMV931MG3299NSC15+SC70-5
MC33887VM3328MC16+HSOP
OPA277PA7240TI15+DIP
LT1114S14#TR5182LT10+SOP-14
MC44BS373CADR23544FREESCALE10+SOP
MAX5024LASA+14550MAXIM16+SOP
LNBH23LQTR1272ST14+QFN-32
88E6185-A2-LKJ1C0001211MARVELL15+QFP
LM348MX6789NSC13+SOP-14
AZ1084CD-ADJTRG11500BCD13+TO-252
LP3990MFX-3.34682NSC15+SOT-23-5
PIC16F616T-I/ML5163MICROCHIP16+QFN
AAT4280IGU-1-T14000ANALOGIC15+SOT23
PAM3116BLBADJR10800PAM16+SOP
L1117LG10000NIKOS15+SOT-223
MMBFJ310LT1G10000ON16+SOT-23
LMV824MX/NOPB4163NSC14+SOP-14
MAX-7Q-0-0007492MAXIM14+GPS
LM2907MX-81000NSC14+SOP-8
OM8744HN574016+QFN
PIC16F1939-I/PT5223MICROCHIP16+QFP

 
 
 
 

Related Products
Image Part # Description
0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

0402 0.063W 10kOhm SMT Thick Film Chip Resistor RC0402JR-0710KL

10 kOhms ±5% 0.063W, 1/16W Chip Resistor 0402 (1005 Metric) Moisture Resistant Thick Film
200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

200MHz MPZ1608S300ATAH0 Chip Beads 5A For Power Line TDK SMD0603

30 Ohms 1 Power Line Ferrite Bead 0603 (1608 Metric) 5A 10mOhm
22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22R 5% SMD0402 Film Chip Resistors ERJ-2GEJ220X PANASONIC

22 Ohms ±5% 0.1W, 1/10W Chip Resistor 0402 (1005 Metric) Automotive AEC-Q200 Thick Film
MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

MOV-20D751K 750V 6.5kA Varistor blue SMD Chip Resistor 1 Circuit Through Hole Disc 20mm

750 V 6.5 kA Varistor 1 Circuit Through Hole Disc 20mm
2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

2SB1261-TP 10W General Purpose Rectifier Diode Silicon Epitaxial Planar Pnp Transistor

Bipolar (BJT) Transistor PNP 60 V 3 A 50MHz 1 W Surface Mount D-Pak
IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

IXFK140N30P Polar Power Mosfet Hiperfet TO264 300V 140A

N-Channel 300 V 140A (Tc) 1040W (Tc) Through Hole TO-264AA (IXFK)
DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

DF2B29FU,H3F TVS 24VWM 47V ESD Protection Diodes

47V Clamp 3A (8/20µs) Ipp Tvs Diode Surface Mount USC
PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

PMEG6010ER​ 1A Low VF MEGA Schottky Barrier Rectifier SOD123

Diode 60 V 1A Surface Mount SOD-123W
SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

SK34SMA 3A SMD Schottky Barrier Rectifier Diodes DO - 214AC

Diode 40 V 3A Surface Mount DO-214AC, SMA
SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

SMBJ5.0A Silicon Avalanche Diodes 600W Surface Mount TVS Diodes

9.2V Clamp 65.3A Ipp Tvs Diode Surface Mount DO-214AA (SMBJ)
Send RFQ
Stock:
MOQ:
10pcs