TZM5239B-GS08 Rectifier Diode Silicon Zener Diodes popular integrated circuits
Specifications
Power Dissipation:
500mW
Junction Temperature:
175°C
Storage Temperature Range:
- 65...+175°C
Forward Voltage:
1.1V
Highlight:
bridge rectifier circuit
,signal schottky diode
Introduction
TZM5239B-GS08 Silicon Zener Diodes
Features
•Very sharp reverse characteristic
•Very high stability
•Electrical data identical with the devices
1N5221B...1N5267B
•Low reverse current level
•VZ–tolerance ± 5%
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25C
Parameter | Test Conditions | Symbol | Value | Unit |
Power dissipation | RthJA<300K/W, Tamb=25C | PV | 500 | mW |
Z–current | IZ | PV/VZ | mA | |
Junction temperature | Tj | 175 | °C | |
Storage temperature range | Tstg | –65...+175 | °C |
Maximum Thermal Resistance
Tj = 25C
Parameter | Test Conditions | Symbol | Value | Unit |
Junction ambient | on PC board 50mmx50mmx1.6mm | RthJA | 500 | K/W |
Electrical Characteristics
Tj = 25C
Parameter | Test Conditions | Symbol | Max | Unit |
Forward voltage | IF=200mA | VF | 1.1 | V |
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Stock:
MOQ:
20pcs